| PART |
Description |
Maker |
| 2SJ201 E001264 |
From old datasheet system
HGIH POWER AMPLIFIER APPLICATION
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5242 |
Power Amplifier Application NPN Transistor(功率放大器用NPN晶体 功率放大器应用NPN晶体管（功率放大器用npn型晶体管
NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)
|
Toshiba, Corp.
|
| 2SC5200 |
POWER AMPLIFIER APPLICATION
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SK349709 |
High Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SK3497 |
High Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SD718 |
HIGH POWER AMPLIFIER APPLICATION
|
UTC
|
| STC3265 |
Audio Power Amplifier Application
|
AUK
|
| 2SK201309 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 10DL2C48A U10DL2C48A U10FL2C48A |
SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| 2SA1981SF |
PNP Silicon Transistor (Audio power amplifier application)
|
AUK[AUK corp]
|
| MRF421 |
Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz
|
New Jersey Semi-Conduct...
|
| GT20D101 E001910 |
From old datasheet system
N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
